SILICON DOPING OF MBE-GROWN GAAS FILMS

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] EFFECT OF HIGH DOPING ON THE PHOTO-LUMINESCENCE EDGE OF GAAS AND INP [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 287 - 289

[3] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 847 - 866

[4] CASEY HC, 1968, J ELECTROCHEM SOC, V114, P149

[5] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[6] EFFECT OF ACCELERATED-GROWTH RATE (1-5 MU-M-H) ON MOLECULAR-BEAM EPITAXIAL GAAS USING SI AS A DOPANT [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 379 - 382

[7] ELECTRON-SCATTERING IN HEAVILY DOPED COMPENSATED POLAR SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6538 - 6541

[8] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[9] EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 777 - &

[10] Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] EFFECT OF HIGH DOPING ON THE PHOTO-LUMINESCENCE EDGE OF GAAS AND INP [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 287 - 289

[3] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 847 - 866

[4] CASEY HC, 1968, J ELECTROCHEM SOC, V114, P149

[5] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[6] EFFECT OF ACCELERATED-GROWTH RATE (1-5 MU-M-H) ON MOLECULAR-BEAM EPITAXIAL GAAS USING SI AS A DOPANT [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 379 - 382

[7] ELECTRON-SCATTERING IN HEAVILY DOPED COMPENSATED POLAR SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6538 - 6541

[8] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[9] EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 777 - &

[10] Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304