ELECTRON-SCATTERING IN HEAVILY DOPED COMPENSATED POLAR SEMICONDUCTORS

[1] BONCH-BRUEVICH VL, 1963, SOV PHYS-SOL STATE, V4, P1953

[2] Brooks H., 1955, ADV ELECTRON, V7, P85

[3] ELECTRON-SCATTERING BY IONIZED IMPURITIES IN SEMICONDUCTORS [J]. REVIEWS OF MODERN PHYSICS, 1981, 53 (04) : 745 - 768

[4] DRUMINSKI M, J CRYST GROWTH

[5] MEYER JMM, UNPUB

[6] PHASE-SHIFT CALCULATION OF IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5413 - 5427

[7] NAG B, 1980, ELECTRON TRANSPORT C

[8] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 535 - 636

[9] SILICON-DOPED GALLIUM ARSENIDE GROWN FROM GALLIUM SOLUTION - SILICON SITE DISTRIBUTION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4200 - &

[10] MICROSCOPIC DIELECTRIC FUNCTION OF A MODEL SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1244 - +

[1] BONCH-BRUEVICH VL, 1963, SOV PHYS-SOL STATE, V4, P1953

[2] Brooks H., 1955, ADV ELECTRON, V7, P85

[3] ELECTRON-SCATTERING BY IONIZED IMPURITIES IN SEMICONDUCTORS [J]. REVIEWS OF MODERN PHYSICS, 1981, 53 (04) : 745 - 768

[4] DRUMINSKI M, J CRYST GROWTH

[5] MEYER JMM, UNPUB

[6] PHASE-SHIFT CALCULATION OF IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5413 - 5427

[7] NAG B, 1980, ELECTRON TRANSPORT C

[8] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 535 - 636

[9] SILICON-DOPED GALLIUM ARSENIDE GROWN FROM GALLIUM SOLUTION - SILICON SITE DISTRIBUTION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4200 - &

[10] MICROSCOPIC DIELECTRIC FUNCTION OF A MODEL SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1244 - +