INFLUENCE OF THE DX CENTER ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF DELTA-DOPED GAAS

被引：24

作者：

ZRENNER, A ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：156 / 158

页数：3

共 20 条

[1] SUBBANDS IN SPACE-CHARGE LAYERS ON NARROW GAP SEMICONDUCTORS - VALIDITY OF SEMICLASSICAL APPROXIMATION [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (07) :2676-2681

[2] MIGRATION OF SI IN DELTA-DOPED GAAS [J].

BEALL, RB ;

CLEGG, JB ;

HARRIS, JJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) :612-615

[3] Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers [J].

Blood, P .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) :7-27

[4] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[5] DIFFUSION STUDIES OF THE SI-DELTA-DOPED GAAS BY CAPACITANCE-VOLTAGE MEASUREMENT [J].

CHIU, TH ;

CUNNINGHAM, JE ;

TELL, B ;

SCHUBERT, EF .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1578-1580

[6] EFFICIENT SI PLANAR DOPING IN GAAS BY FLOW-RATE MODULATION EPITAXY [J].

KOBAYASHI, N ;

MAKIMOTO, T ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09) :L746-L748

[7] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

[8] INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS [J].

MAUDE, DK ;

PORTAL, JC ;

DMOWSKI, L ;

FOSTER, T ;

EAVES, L ;

NATHAN, M ;

HEIBLUM, M ;

HARRIS, JJ ;

BEALL, RB .

PHYSICAL REVIEW LETTERS, 1987, 59 (07) :815-818

[9] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].

MIZUTA, M ;

TACHIKAWA, M ;

KUKIMOTO, H ;

MINOMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146

[10] EFFECT OF SUBSTRATE-TEMPERATURE ON MIGRATION OF SI IN PLANAR-DOPED GAAS [J].

SANTOS, M ;

SAJOTO, T ;

ZRENNER, A ;

SHAYEGAN, M .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2504-2506

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