SILICON SEGREGATION IN DELTA-DOPED GAAS CHARACTERIZED BY AUGER-ELECTRON SPECTROSCOPY

被引：20

作者：

WEBB, C

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 21期

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D O I：

10.1063/1.101173

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：2091 / 2093

页数：3

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