SPATIAL LOCALIZATION OF SI IN SELECTIVELY DELTA-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES FOR HIGH MOBILITY AND DENSITY REALIZATION

被引：7

作者：

CUNNINGHAM, JE ^{[1
]}

TIMP, G ^{[1
]}

CHANG, AM ^{[1
]}

CHIU, TH ^{[1
]}

JAN, W ^{[1
]}

SCHUBERT, EF ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90395-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：253 / 256

页数：4

共 15 条

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[2] CNNINGHAM JE, 1988, J VACUUM SCI TECHN B, V6, P599
[3] QUANTUM SIZE EFFECT IN MONOLAYER-DOPED HETEROSTRUCTURES
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[4] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828
[5] OBSERVATION OF STRONG LOCALIZATION EFFECTS IN (ALGA)AS-GAAS TWO-DIMENSIONAL ELECTRON-GAS STRUCTURES AT LOW MAGNETIC-FIELDS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 511 - 514
[6] CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD
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SAKAKI, H
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 253 - 255
[7] HIYAMIZU K, 1983, JPN J APPL PHYS, V22, P1609
[8] TRANSPORT-PROPERTIES OF SELECTIVELY DOPED GAAS-(ALGA)AS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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STORMER, HL
KERAMIDAS, VG
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 802 - 804
[9] IMPROVEMENT OF TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES BY ATOMIC PLANAR DOPING
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1937 - 1940
[10] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES
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HEIBLUM, M
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 294 - 296

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