GAS SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF HETEROJUNCTION BIPOLAR-TRANSISTORS CONTAINING 1 MONOLAYER DELTA-BE

被引：3

作者：

CUNNINGHAM, JE ^{[1
]}

KUO, TY ^{[1
]}

OURMAZD, A ^{[1
]}

GOOSSEN, K ^{[1
]}

JAN, W ^{[1
]}

STORZ, F ^{[1
]}

REN, F ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91031-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present results on AlGaAs/GaAs Heterostructure Bipolar Transistors containing a 1 monolayer delta-Be doped sheet in a GaAs base 100 angstrom wide that is grown by gas source molecular beam epitaxy. Also, diffraction measurements performed on 1 monolayer delta-Be layers show the planar doping widths are 40 and 200 angstrom for gas source and molecular beam epitaxial growth, respectively. Be diffusion measurements versus varying anneal conditions are presented and shown to be consistent with a kick-out mechanism involving interstitial Be.

引用

页码：515 / 520

页数：6

共 16 条

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CHAND N, 1986, J VACUUM SCI TECHN B, V4, P2

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