ATOMIC LAYER EPITAXY OF GAAS BY CHEMICAL BEAM EPITAXY

被引：24

作者：

CHIU, TH ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

ROBERTSON, A ^{[1
]}

MALM, DL ^{[1
]}

机构：

[1] AT&T BELL LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90354-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report a study of atomic layer epitaxy (ALE) using trimethyl-Ga and triethyl-Ga by chemical beam epitaxy. Reflection high energy electron diffraction is employed to monitor the formation of each individual monolayer directly. A limiting mechanism which inhibits the continual adsorption and pyrolysis on a surface saturated with Ga-alkyl is found to exists for a short period of time, depending on the growth temperature. The dynamical evolution of the surface reconstruction indicates that a saturation coverage of the Ga-alkyls instead of Ga atoms is responsible for the limiting mechanism. © 1990.

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页码：155 / 161

页数：7

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