OBSERVATION AND SIMULATION OF SPACE-CHARGE EFFECTS AND HYSTERESIS IN ZNS-MN AC THIN-FILM ELECTROLUMINESCENT DEVICES

被引:22
作者
NEYTS, KA
CORLATAN, D
DEVISSCHERE, P
VANDENBOSSCHE, J
机构
[1] Vakgroep Elektronika en Informatiesystemen, Universiteit Gent, B-9000 Ghent
关键词
D O I
10.1063/1.355736
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have shown from basic considerations that the negative resistance effect measured in thin-film electroluminescent devices must involve some variation of space charge in the phosphor layer. Time-delayed voltage pulse experiments indicate that positive space charge decreases spontaneously. By introducing the presence of deep donor levels which can be ionized by accelerated electrons and, when positively charged, have some typical decay time for the release of a hole, we have created a numerical model which is able to simulate negative resistance, time-delayed pulse experiments and the influence of temperature and frequency on the hysteretic behavior.
引用
收藏
页码:5339 / 5346
页数:8
相关论文
共 30 条
[1]   EVIDENCE FOR SPACE-CHARGE IN ATOMIC LAYER EPITAXY ZNS-MN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].
DOUGLAS, AA ;
WAGER, JF ;
MORTON, DC ;
KOH, JB ;
HOGH, CP .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :296-299
[2]   BULK DEEP TRAPS IN ZNS AND THEIR RELATION TO HIGH-FIELD ELECTROLUMINESCENCE [J].
GEOFFROY, A ;
BRINGUIER, E .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) :A131-A133
[3]   MEMORY IN THIN-FILM ELECTROLUMINESCENT DEVICES [J].
HOWARD, WE .
JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) :155-173
[4]   A SIMPLE-MODEL FOR THE HYSTERETIC BEHAVIOR OF ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES [J].
HOWARD, WE ;
SAHNI, O ;
ALT, PM .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :639-647
[5]   ELECTRON-BEAM SWITCHING OF THIN-FILM ZNS ELECTROLUMINESCENT DEVICES [J].
HOWARD, WE ;
ALT, PM .
APPLIED PHYSICS LETTERS, 1977, 31 (06) :399-401
[6]  
HOWARD WE, 1980, 1ST WORKSH EL LIEG
[7]   PHYSICAL CONCEPTS OF HIGH-FIELD, THIN-FILM ELECTRO-LUMINESCENCE DEVICES [J].
MACH, R ;
MULLER, GO .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 69 (01) :11-66
[8]   MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE [J].
MARRELLO, V ;
RUHLE, W ;
ONTON, A .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :452-454
[9]   MEASURING ON THIN-FILM ELECTROLUMINESCENT DEVICES [J].
MULLER, GO ;
MACH, R ;
SELLE, B ;
SCHULZ, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (02) :657-669
[10]  
MULLER GO, 1990, ACTA POLYTECH SCAND, V170, P13