A STEADY-STATE CONSTANT CAPACITANCE METHOD FOR THE CHARACTERIZATION OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS

被引：13

作者：

GRIMMEISS, HG

KULLENDORFF, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期

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D O I：

10.1063/1.327545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5852 / 5854

页数：3

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[7] GRIMMEISS HG, UNPUBLISHED
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