ZINC-OXIDE FILMS PREPARED BY DC REACTIVE MAGNETRON SPUTTERING AT DIFFERENT SUBSTRATE TEMPERATURES

The properties of zinc oxide films prepared by dc reactive magnetron sputtering were studied over a range of the substrate temperatures (room temperature to 450-degrees-C). The dependence of the structure of the films on the substrate temperature was studied using scanning electron microscopy and X-ray diffraction. The films had a preferred orientation along the (002) crystal plane at room temperature (50-degrees-C), a random orientation at 200-300-degrees-C and again a preferred orientation along the (002) crystal plane at 350-450-degrees-C. The grain size increased as the substrate temperature was raised. In addition, the optical and electrical properties have also been investigated.