SCANNING PROBE MICROSCOPY ON THE SURFACE OF SI(111)

被引：20

作者：

MEYER, E

HOWALD, L

LUTHI, R

HAEFKE, H

RUETSCHI, M

BONNER, T

OVERNEY, R

FROMMER, J

HOFER, R

GUNTHEROIDT, HJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultrahigh vacuum atomic force microscope, operated in the noncontact mode, is used to characterize n-doped Si(111) surfaces. Ionized impurities are observed with electrostatic forces, demonstrating contrast reversal by changing the polarity of the voltage between probing tip and sample. The impurities form one-dimensional domains on the silicon surface. Steps and lines, connecting kink sites, are preferentially occupied by these impurities.

引用

页码：2060 / 2063

页数：4

共 22 条

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