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CO-INTEGRATION OF GAAS-MESFET AND SI CMOS CIRCUITS
被引:17
作者
:
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
SHICHIJO, H
MATYI, RJ
论文数:
0
引用数:
0
h-index:
0
MATYI, RJ
TADDIKEN, AH
论文数:
0
引用数:
0
h-index:
0
TADDIKEN, AH
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1988年
/ 9卷
/ 09期
关键词
:
D O I
:
10.1109/55.6940
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:444 / 446
页数:3
相关论文
共 5 条
[1]
MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS
[J].
CHOI, HK
论文数:
0
引用数:
0
h-index:
0
CHOI, HK
;
TURNER, GW
论文数:
0
引用数:
0
h-index:
0
TURNER, GW
;
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
TSAUR, BY
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(04)
:241
-243
[2]
AN ECL-COMPATIBLE GAAS-MESFET 1-KBIT STATIC RAM
[J].
MCLEVIGE, WV
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
MCLEVIGE, WV
;
CHANG, CTM
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
CHANG, CTM
;
TADDIKEN, AH
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
TADDIKEN, AH
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1987,
22
(02)
:262
-267
[3]
SHAW DW, 1987, MATER RES SOC S P, V91, P15
[4]
GROWTH AND PATTERNING OF GAAS/GE SINGLE-CRYSTAL LAYERS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
[J].
SHELDON, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
SHELDON, P
;
JONES, KM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
JONES, KM
;
HAYES, RE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
HAYES, RE
;
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
TSAUR, BY
;
FAN, JCC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
FAN, JCC
.
APPLIED PHYSICS LETTERS,
1984,
45
(03)
:274
-276
[5]
MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100)
[J].
WANG, WI
论文数:
0
引用数:
0
h-index:
0
WANG, WI
.
APPLIED PHYSICS LETTERS,
1984,
44
(12)
:1149
-1151
←
1
→
共 5 条
[1]
MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS
[J].
CHOI, HK
论文数:
0
引用数:
0
h-index:
0
CHOI, HK
;
TURNER, GW
论文数:
0
引用数:
0
h-index:
0
TURNER, GW
;
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
TSAUR, BY
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(04)
:241
-243
[2]
AN ECL-COMPATIBLE GAAS-MESFET 1-KBIT STATIC RAM
[J].
MCLEVIGE, WV
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
MCLEVIGE, WV
;
CHANG, CTM
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
CHANG, CTM
;
TADDIKEN, AH
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
TADDIKEN, AH
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1987,
22
(02)
:262
-267
[3]
SHAW DW, 1987, MATER RES SOC S P, V91, P15
[4]
GROWTH AND PATTERNING OF GAAS/GE SINGLE-CRYSTAL LAYERS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
[J].
SHELDON, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
SHELDON, P
;
JONES, KM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
JONES, KM
;
HAYES, RE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
HAYES, RE
;
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
TSAUR, BY
;
FAN, JCC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLORADO, DEPT ELECT ENGN, BOULDER, CO 80309 USA
FAN, JCC
.
APPLIED PHYSICS LETTERS,
1984,
45
(03)
:274
-276
[5]
MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100)
[J].
WANG, WI
论文数:
0
引用数:
0
h-index:
0
WANG, WI
.
APPLIED PHYSICS LETTERS,
1984,
44
(12)
:1149
-1151
←
1
→