AMPLIFIED SPONTANEOUS EMISSION IN SEMICONDUCTOR-LASER AMPLIFIERS - VALIDITY OF THE TRANSMISSION-LINE LASER MODEL

被引：26

作者：

LOWERY, AJ ^{[1
]}

机构：

[1] UNIV NOTTINGHAM, NOTTINGHAM NG7 2RD, ENGLAND

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1990年 / 137卷 / 04期

关键词：

D O I：

10.1049/ip-j.1990.0041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Previously, the transmission line laser model (TLLM) has been used to predict the pulse response of semiconductor laser amplifiers. This paper shows that it can also be used find the magnitude and spectral properties of internally amplified spontaneous emission noise in TWLA, FPLA and DFB laser amplifiers.

引用

页码：241 / 247

页数：7

共 47 条

[41] AMPLIFIED SPONTANEOUS EMISSION AND GAIN CHARACTERISTICS OF FABRY-PEROT AND TRAVELING WAVE TYPE SEMICONDUCTOR-LASER AMPLIFIERS [J].