ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS/INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M

被引：9

作者：

PABLA, AS

HOPKINSON, M

DAVID, JPR

KHOO, EA

REES, GJ

机构：

[1] Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 20期

关键词：

ELECTROABSORPTION MODULATORS; PIEZOELECTRIC SEMICONDUCTORS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19941173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An investigation of absorption modulation using strained piezoelectric InGaAs/InP multiquantum wells grown on (111)B InP substrates is presented. Strong excitonic features are observed in the room temperature photocurrent spectra for a structure with 50 Angstrom quantum wells under 0.6% compressive strain. The application of a reverse bias results in a large blue-shift of the absorption edge of up to 8 nm/V.

引用

收藏

页码：1707 / 1708

页数：2

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