DETECTOR MATERIALS - GERMANIUM AND SILICON

被引：12

作者：

HALLER, EE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 03期

关键词：

D O I：

10.1109/TNS.1982.4336330

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1109 / 1118

页数：10

共 9 条

[1] HIGH PURITY GERMANIUM FOR DETECTOR FABRICATION [J].

HALL, RN .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (01) :160-+

[2] PHYSICS OF ULTRA-PURE GERMANIUM [J].

HALLER, EE ;

HANSEN, WL ;

GOULDING, FS .

ADVANCES IN PHYSICS, 1981, 30 (01) :93-138

[3] DEEP LEVEL TRANSIENT SPECTROSCOPY OF HIGH-PURITY GERMANIUM DIODES-DETECTORS [J].

HALLER, EE ;

LI, PP ;

HUBBARD, GS ;

HANSEN, WL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) :265-270

[4]

HALLER EE, 1982, IEEE T NUCL SCI, V29

[5] HIGH-PURITY GERMANIUM CRYSTAL GROWING [J].

HANSEN, WL .

NUCLEAR INSTRUMENTS & METHODS, 1971, 94 (02) :377-&

[6] PROTECTIVE SURFACE-COATINGS ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS [J].

HANSEN, WL ;

HALLER, EE ;

HUBBARD, GS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (01) :247-251

[7]

Kittel Ch, 1978, INTRO SOLID STATE PH

[8] PHOTOELECTRIC SPECTROSCOPY - NEW METHOD OF ANALYSIS OF IMPURITIES IN SEMICONDUCTORS [J].

KOGAN, SM ;

LIFSHITS, TM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01) :11-39

[9] ION DRIFT IN AN N-P JUNCTION [J].

PELL, EM .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :291-302

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