WIDE-RANGE OF SCHOTTKY-BARRIER HEIGHT FOR METAL CONTACTS TO GAAS CONTROLLED BY SI INTERFACE LAYERS

被引：25

作者：

WALDROP, JR

GRANT, RW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584235

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1432 / 1435

页数：4

共 14 条

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[2] VARIATION OF N-GAAS (100) INTERFACE FERMI LEVEL BY GE AND SI OVERLAYERS
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[3] THE SI/GAAS(110) HETEROJUNCTION DISCONTINUITY - AMORPHOUS VERSUS CRYSTALLINE OVERLAYERS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1459 - 1463
[4] MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION
MASSIES, J
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LAVIRON, M
LINH, NT
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 693 - 695
[5] RHODERICK E, 1977, METAL SEMICONDUCTOR
[6] HIGHLY ELECTRONEGATIVE CONTACTS TO COMPOUND SEMICONDUCTORS
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BEST, JS
MCCALDIN, JO
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 930 - 934
[7] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
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[J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543
[8] A LARGE BARRIER HEIGHT SCHOTTKY CONTACT BETWEEN AMORPHOUS SI-GE-B AND GAAS
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ASAI, K
KURUMADA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L709 - L711
[9] ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT
WALDROP, JR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 445 - 448
[10] EFFECT OF GROWTH SEQUENCE ON THE BAND DISCONTINUITIES AT ALAS/GAAS (100) AND (110) HETEROJUNCTION INTERFACES
WALDROP, JR
GRANT, RW
KRAUT, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1209 - 1214

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