共 14 条
- [2] VARIATION OF N-GAAS (100) INTERFACE FERMI LEVEL BY GE AND SI OVERLAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1015 - 1019
- [3] THE SI/GAAS(110) HETEROJUNCTION DISCONTINUITY - AMORPHOUS VERSUS CRYSTALLINE OVERLAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1459 - 1463
- [5] RHODERICK E, 1977, METAL SEMICONDUCTOR
- [6] HIGHLY ELECTRONEGATIVE CONTACTS TO COMPOUND SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 930 - 934
- [8] A LARGE BARRIER HEIGHT SCHOTTKY CONTACT BETWEEN AMORPHOUS SI-GE-B AND GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L709 - L711
- [9] ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 445 - 448
- [10] EFFECT OF GROWTH SEQUENCE ON THE BAND DISCONTINUITIES AT ALAS/GAAS (100) AND (110) HETEROJUNCTION INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1209 - 1214