INFLUENCE OF REFLECTIVITY ON EXTERNAL QUANTUM EFFICIENCY OF GAAS INJECTION LASERS

被引:9
作者
ULBRICH, R
PILKUHN, MH
机构
关键词
D O I
10.1109/JQE.1970.1076474
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:314 / &
相关论文
共 8 条
[1]  
BIARD JR, 1964, T METALL SOC AIME, V230, P286
[2]   VARIATION OF GAIN FACTOR OF GAAS LASERS WITH PHOTON AND CURRENT DENSITIES [J].
NANNICHI, Y .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3009-&
[3]   EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS [J].
PILKUHN, M ;
RUPPRECHT, H ;
BLUM, S .
SOLID-STATE ELECTRONICS, 1964, 7 (12) :905-909
[4]  
PILKUHN MH, 1968, JUL P INT C PHYS SEM, V1, P523
[5]   SATURATION EFFECTS IN HIGH-GAIN LASERS [J].
RIGROD, WW .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2487-&
[6]   LASER EFFICIENCY AT HIGH PUMP LEVELS [J].
SCOTT, AC .
SOLID-STATE ELECTRONICS, 1965, 8 (06) :551-&
[7]  
SUSAKI W, 1968, IEEE J QUANTUM ELECT, VQE 4, P122
[8]  
ULBRICH R, TO BE PUBLISHED