VARIATION OF GAIN FACTOR OF GAAS LASERS WITH PHOTON AND CURRENT DENSITIES

被引：20

作者：

NANNICHI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 08期

关键词：

D O I：

10.1063/1.1703154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3009 / &

相关论文

共 7 条

[1] ONSET OF STIMULATED EMISSION FROM GALLIUM ARSENIDE SEMICONDUCTOR OPTICAL MASERS
BROOM, RF
OLIVER, DJ
HILSUM, C
GOOCH, CH
[J]. NATURE, 1963, 198 (487) : 368 - &
[2] SMALL-SIGNAL AMPLIFICATION IN GAAS LASERS - GAAS LASER DIODES SMALL SIGNAL AMPLIFICATION TRAVELING WAVE AMPLIFICATION 77 DEGREES K E/T
CROWE, JW
CRAIG, RM
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (03) : 57 - &
[3] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS
LASHER, G
STERN, F
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &
[4] THRESHOLD CURRENTS FOR LINE NARROWING IN GAAS JUNCTION DIODES
MAYBURG, S
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1791 - &
[5] MODIFICATION OF THRESHOLD CURRENT OF GAAS LASER BY A REFLECTIVE COATING ON 1 END
NANNICHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) : 53 - &
[6] EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS
PILKUHN, M
RUPPRECHT, H
BLUM, S
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 905 - 909
[7] A RELATION BETWEEN CURRENT DENSITY AT THRESHOLD AND LENGTH OF FABRY-PEROT TYPE GAAS LASERS
PILKUHN, M
RUPPRECHT, H
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1243 - &