LOW-TEMPERATURE MOVPE GROWTH OF ZNSE WITH DITERTIARYBUTYLSELENIDE

被引:31
作者
KUHN, W
NAUMOV, A
STANZL, H
BAUER, S
WOLF, K
WAGNER, HP
GEBHARDT, W
POHL, UW
KROST, A
RICHTER, W
DUMICHEN, U
THIELE, KH
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,W-1000 BERLIN 12,GERMANY
[2] TH MERSEBURG,INST ANORGAN CHEM,O-4200 MERSEBURG,GERMANY
[3] AF IOFFE PHYSICOTECH INST,ST PETERSBURG 194021,USSR
关键词
D O I
10.1016/0022-0248(92)90624-R
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The results on the synthesis of the selenium alkyl ditertiarybutylselenide and its application in atmospheric pressure MOVPE are presented. In combination with dimethylzinc-triethylamine, single crystalline ZnSe layers were grown on GaAs at temperatures lower than 350-degrees-C. Good morphology, crystalline and interface quality are demonstrated by optical and electron microscopy, X-ray diffraction and Raman spectroscopy. Photoluminescence at 2 K reveals chlorine as an impurity. The electron mobility of 500 cm2/V.s at room temperature supports a fairly low compensation.
引用
收藏
页码:605 / 610
页数:6
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