DETECTION OF COMPOUND FORMATION AT THE ZNSE/GAAS INTERFACE USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY (HRTEM)

被引:27
作者
WRIGHT, AC
WILLIAMS, JO
机构
[1] Solid State Chemistry Group, Department of Chemistry, UMIST, Manchester, M60 1QD
关键词
D O I
10.1016/0022-0248(91)90684-W
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Experimental high resolution transmission electron microscopy (HRTEM) and theoretical image simulations have been used to confirm the presence of compound formation at interfaces between ZnSe epitaxial layers prepared by metalorganic vapour phase epitaxy (MOVPE) and single crystal GaAs substrates. Visibility of the compound in HRTEM is enhanced using the [100] projection instead of the more usual [110] direction for cross-sectional studies. Electron image simulations indicate that HRTEM has the capability to detect the occurrence of compound formation down to thicknesses of one unit cell. Our experimental results show compound layer thicknesses of 2 nm.
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页码:99 / 106
页数:8
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