A SIMPLE ESTIMATE OF DEPOSITED ENERGY AND CONCENTRATION PROFILES IN FILMS PRODUCED BY ION-ASSISTED PHYSICAL VAPOR-DEPOSITION

被引：9

作者：

GRIGOROV, KG

BOUCHIER, D

GRIGOROV, GI

VIGNES, JL

LANGERON, JP

机构：

[1] CNRS, CECM, F-94400 VITRY, FRANCE

[2] BAS, INST ELECTR, BU-1784 SOFIA, BULGARIA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 06期

关键词：

D O I：

10.1007/BF00348175

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Analytical expressions for estimating the energy dissipation and the film constituent concentration profiles in films grown by Ion-Assisted Physical Vapour Deposition (IA PVD) are given. Two cases of IA PVD are considered: ion-assistance performed by inert-gas ions as well as by ions of a film constituent. As an example of application, concentration and damage depth profiles in h-BN films grown by IA PVD are calculated and a comparison is made with results obtained by computer simulation.

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收藏

页码：619 / 622

页数：4

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