PROCESS DEPENDENCE OF ALAS/GAAS SUPERLATTICE MIXING INDUCED BY SILICON IMPLANTATION

被引：25

作者：

SCHWARZ, SA ^{[1
]}

VENKATESAN, T ^{[1
]}

HWANG, DM ^{[1
]}

YOON, HW ^{[1
]}

BHAT, R ^{[1
]}

ARAKAWA, Y ^{[1
]}

机构：

[1] UNIV TOKYO,MINATO KU,TOKYO 106,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.98225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：281 / 283

页数：3

共 14 条

[1] SI IMPLANTATION IN GAAS [J].

BHATTACHARYA, RS ;

RAI, AK ;

YEO, YK ;

PRONKO, PP ;

LING, SC ;

WILSON, SR ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2329-2337

[2] QUANTUM-WELL ALGA1-XAS-GAAS LASERS WITH INTERNAL (SI2)(GAAS)1-X BARRIERS [J].

BURNHAM, RD ;

HOLONYAK, N ;

HSIEH, KC ;

KALISKI, RW ;

NAM, DW ;

THORNTON, RL ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :800-802

[3] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

COLEMAN, JJ ;

DAPKUS, PD ;

KIRKPATRICK, CG ;

CAMRAS, MD ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906

[4] IMPLANTATION DISORDERING OF ALXGA1-XAS SUPERLATTICES [J].

GAVRILOVIC, P ;

DEPPE, DG ;

MEEHAN, K ;

HOLONYAK, N ;

COLEMAN, JJ ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :130-132

[5] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J].

GREINER, ME ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5181-5191

[6] COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION [J].

HIRAYAMA, Y ;

SUZUKI, Y ;

TARUCHA, S ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (07) :L516-L518

[7] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].

HOLONYAK, N ;

LAIDIG, WD ;

CAMRAS, MD ;

COLEMAN, JJ ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :102-104

[8] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J].

KAWABE, M ;

MATSUURA, N ;

SHIMIZU, N ;

HASEGAWA, F ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L623-L624

[9] SIMS STUDY OF COMPOSITIONAL DISORDERING IN SI ION-IMPLANTED ALGAAS-GAAS SUPERLATTICE [J].

KOBAYASHI, J ;

NAKAJIMA, M ;

BAMBA, Y ;

FUKUNAGA, T ;

MATSUI, K ;

ISHIDA, K ;

NAKASHIMA, H ;

ISHIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (05) :L385-L387

[10] DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES [J].

LEE, JW ;

LAIDIG, WD .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :147-165

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