ALIGNABLE LIFTOFF TRANSFER OF DEVICE ARRAYS VIA A SINGLE POLYMERIC CARRIER MEMBRANE

被引:7
作者
CALLAHAN, JJ
MARTIN, KP
DRABIK, TJ
QUIMBY, BB
FAN, C
机构
[1] GEORGIA INST TECHNOL,CTR MICROELECTR RES,ATLANTA,GA 30332
[2] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093
关键词
SEMICONDUCTOR DEVICES AND MATERIALS;
D O I
10.1049/el:19930634
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Letter reports epitaxial liftoff and direct bonding of GaAs/AlxGa1-xAs heterostructure device arrays and continuous films, using a single transparent polymer membrane to support the material during etch of the sacrificial layer and to manipulate it into position for bonding. Au-Sn eutectic alloy bonding leads to a metallurgical bond in minutes. Photoluminescence and current voltage characteristics show that material quality is not substantially degraded in the transfer process.
引用
收藏
页码:951 / 953
页数:3
相关论文
共 13 条
  • [1] ALIGNABLE EPITAXIAL LIFTOFF OF GAAS MATERIALS WITH SELECTIVE DEPOSITION USING POLYIMIDE DIAPHRAGMS
    CAMPERIGINESTET, C
    HARGIS, M
    JOKERST, N
    ALLEN, M
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (12) : 1123 - 1126
  • [2] IN-LINE OPTICAL FILTER USING LIFTED-OFF GAAS/ALGAAS MULTILAYER
    DELL, JM
    YOFFE, GW
    [J]. ELECTRONICS LETTERS, 1991, 27 (01) : 26 - 27
  • [3] FAN JCC, 1987, HETEROEPITAXY SILICO
  • [4] CHARACTERIZATION OF THIN ALGAAS/INGAAS/GAAS QUANTUM-WELL STRUCTURES BONDED DIRECTLY TO SIO2/SI AND GLASS SUBSTRATES
    KLEM, JF
    JONES, ED
    MYERS, DR
    LOTT, JA
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) : 459 - 462
  • [5] KO WH, 1985, STUDIES ELECTRICAL E, V20, P41
  • [6] MEYERS DR, 1988, 1988 INT EL DEV M IE, P704
  • [7] Miller D. A. B., 1989, IEEE Photonics Technology Letters, V1, P62, DOI 10.1109/68.87897
  • [8] EPITAXIAL LIFT-OFF GAAS LEDS TO SI FOR FABRICATION OF OPTO-ELECTRONIC INTEGRATED-CIRCUITS
    POLLENTIER, I
    DEMEESTER, P
    ACKAERT, A
    BUYDENS, L
    VANDAELE, P
    BAETS, R
    [J]. ELECTRONICS LETTERS, 1990, 26 (03) : 193 - 194
  • [9] EPITAXIAL LIFTOFF OF ALAS GAAS DOUBLE BARRIER RESONANT TUNNELING DIODES
    TSAO, AJ
    REDDY, VK
    NEIKIRK, DP
    [J]. ELECTRONICS LETTERS, 1991, 27 (06) : 484 - 486
  • [10] VANDERWAALS BONDING OF GAAS EPITAXIAL LIFTOFF FILMS ONTO ARBITRARY SUBSTRATES
    YABLONOVITCH, E
    HWANG, DM
    GMITTER, TJ
    FLOREZ, LT
    HARBISON, JP
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (24) : 2419 - 2421