The Letter reports epitaxial liftoff and direct bonding of GaAs/AlxGa1-xAs heterostructure device arrays and continuous films, using a single transparent polymer membrane to support the material during etch of the sacrificial layer and to manipulate it into position for bonding. Au-Sn eutectic alloy bonding leads to a metallurgical bond in minutes. Photoluminescence and current voltage characteristics show that material quality is not substantially degraded in the transfer process.