INVESTIGATION OF 1.3-MU-M INGAASP-INP LASERS BY THE MEASUREMENT OF CURRENT-INJECTION-INDUCED ACOUSTIC (CIA) SIGNALS

被引：7

作者：

SUEMUNE, I ^{[1
]}

YAMANISHI, M ^{[1
]}

MIKOSHIBA, N ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 09期

关键词：

D O I：

10.1143/JJAP.20.L631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L631 / L634

页数：4

共 10 条

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[6] OBSERVATION OF ACOUSTIC-SIGNALS FROM SEMICONDUCTOR-LASERS [J].

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[7]

SUEMUNE I, 1980, OQE80104 I EL COMM E

[8] NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS [J].

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[9] ANALYSIS OF INTRINSIC SATURABLE ABSORPTION IN INGAASP-INP DIODE-LASERS [J].

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[10] TEMPERATURE CHARACTERISTICS OF THRESHOLD CURRENT IN INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS [J].

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