EFFECT OF VALENCE-BAND ANISOTROPY AND NONPARABOLICITY ON TOTAL SCATTERING RATES FOR HOLES IN NONPOLAR SEMICONDUCTORS

被引：8

作者：

DUR, M ^{[1
]}

UNTERRAINER, K ^{[1
]}

GORNIK, E ^{[1
]}

机构：

[1] VIENNA TECH UNIV, INST FESTKORPERELEKTRON, A-1040 VIENNA, AUSTRIA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.49.13991

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate theoretically the effect of the warped and nonparabolic valence-band structure on the total scattering rates for holes in cubic semiconductors with diamond lattices using the multiband effective-mass theory. All numerical calculations are done for silicon and include ionized-impurity scattering, optical-, and acoustical-phonon scattering. We find that the anisotropy and nonparabolicity of the valence bands result in a considerable dependence of the total scattering rates on the incident direction of the hole wave vector.

引用

页码：13991 / 13994

页数：4

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