HIGH-RATE JET PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION

[1] BARDOS L, Patent No. 3620214

[2] BARDOS L, 1985, Patent No. 246982

[3] BARDOS L, 1987, 14TH P CZECH SEM PLA

[4] CHARACTERIZATION OF PLASMA SILICON-NITRIDE LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2419 - 2423

[5] NEW MODE OF PLASMA DEPOSITION IN A CAPACITIVELY COUPLED REACTOR [J]. APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1049 - 1051

[6] PROPERTIES OF AMORPHOUS-SILICON NITRIDE PREPARED AT HIGH DEPOSITION RATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L469 - L471

[1] BARDOS L, Patent No. 3620214

[2] BARDOS L, 1985, Patent No. 246982

[3] BARDOS L, 1987, 14TH P CZECH SEM PLA

[4] CHARACTERIZATION OF PLASMA SILICON-NITRIDE LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2419 - 2423

[5] NEW MODE OF PLASMA DEPOSITION IN A CAPACITIVELY COUPLED REACTOR [J]. APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1049 - 1051

[6] PROPERTIES OF AMORPHOUS-SILICON NITRIDE PREPARED AT HIGH DEPOSITION RATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L469 - L471