INTERSTITIAL OXYGEN DETERMINATION IN HEAVILY DOPED SILICON

被引：10

作者：

BORGHESI, A

GEDDO, M

GUIZZETTI, G

GERANZANI, P

机构：

[1] UNIV MODENA,DEPARTIMENTO FIS,I-41100 MODENA,ITALY

[2] MEMC ELECTR MAT SPA,I-28100 NOVARA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期

关键词：

D O I：

10.1063/1.346647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Systematic infrared transmission measurements have been performed on heavily Sb-doped (up to 2×1018 atoms/cm3) silicon samples. The interstitial oxygen content is obtained analyzing the optical response near the 1107-cm-1 oxygen absorption band with a new technique based on a curved baseline, accounting for free-carrier absorption. The results are discussed and compared with those obtained for the same samples by a short baseline technique and by secondary-ion mass spectroscopy (SIMS) analysis. Regression straight-line fits, relative to two lots of 16 samples each, show a good linear correlation between infrared (IR) and SIMS data, although the IR estimates are consistently lower than those obtained by SIMS.

引用

页码：1655 / 1660

页数：6

共 23 条

[1] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA ;

KINSBRON, E .

PHYSICAL REVIEW B, 1984, 29 (02) :768-779

[2]

BLEILER RJ, 1985, MATER RES SOC S P, V59, P73

[3] INFRARED PROPERTIES OF BULK HEAVILY DOPED SILICON [J].

BORGHESI, A ;

CHENJIA, C ;

GUIZZETTI, G ;

MARABELLI, F ;

NOSENZO, L ;

REGUZZONI, E ;

STELLA, A ;

OSTOJA, P .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1985, 5 (03) :292-303

[4] FUNDAMENTAL OPTICAL-PROPERTIES OF HEAVILY-BORON-DOPED SILICON [J].

BORGHESI, A ;

BOTTAZZI, P ;

GUIZZETTI, G ;

NOSENZO, L ;

STELLA, A ;

CAMPISANO, SU ;

RIMINI, E ;

CEMBALI, F ;

SERVIDORI, M .

PHYSICAL REVIEW B, 1987, 36 (18) :9563-9568

[5]

CHU PK, 1985, MATER RES SOC S P, V59, P67

[6]

CRAVEN RA, 1984, MATER RES SOC S P, V36, P159

[7] QUANTUM THEORY OF FREE CARRIER ABSORPTION [J].

DUMKE, WP .

PHYSICAL REVIEW, 1961, 124 (06) :1813-&

[8]

Edwards D. F., 1985, HDB OPTICAL CONSTANT, P547

[9] OPTICAL DETERMINATION OF FREE-CARRIER CONCENTRATION IN EPITAXIAL LAYERS OF N-TYPE SILICON GROWN ON N+-SUBTRATES OR N+-SUBTRATES [J].

GEDDO, M ;

MAGHINI, D ;

STELLA, A ;

COTTINI, M .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4733-4735

[10]

JENSEN B, 1985, HDB OPTICAL CONSTANT, pCH9

← 1 2 3 →