共 28 条
[2]
[Anonymous], 1982, LASER ANNEALING SEMI
[4]
DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV
[J].
PHYSICAL REVIEW B,
1984, 29 (02)
:768-779
[6]
DETERMINATION OF EFFECTIVE MASS VALUES BY A KRAMERS-KRONIG ANALYSIS FOR VARIOUSLY DOPED SILICON-CRYSTALS
[J].
INFRARED PHYSICS,
1977, 17 (02)
:111-119
[7]
BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1981, 24 (04)
:1971-1986