OPTICAL DETERMINATION OF FREE-CARRIER CONCENTRATION IN EPITAXIAL LAYERS OF N-TYPE SILICON GROWN ON N+-SUBTRATES OR N+-SUBTRATES

被引：7

作者：

GEDDO, M

MAGHINI, D

STELLA, A

COTTINI, M

机构：

[1] UNIV PAVIA,CTR INTERUNIV STRUTTURA MAT,I-27100 PAVIA,ITALY

[2] SGS ATES COMPONENTI ELETTR SPA,DIV BIPOLAR,DEPT EPITAXIAL,AGRATE BRIANZA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.336248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4733 / 4735

页数：3

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