EFFECTS OF THERMAL ANNEALING ON THE REFRACTIVE-INDEX OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION

被引：78

作者：

FREDRICKSON, JE

WADDELL, CN

SPITZER, WG

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

[2] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

[3] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 02期

关键词：

D O I：

10.1063/1.93032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：172 / 174

页数：3

共 16 条

[1] STABILIZED CVD AMORPHOUS SILICON FOR HIGH-TEMPERATURE PHOTOTHERMAL SOLAR-ENERGY CONVERSION [J].

BOOTH, DC ;

ALLRED, DD ;

SERAPHIN, BO .

SOLAR ENERGY MATERIALS, 1979, 2 (01) :107-124

[2]

CONNELL GAN, 1979, AMORPHOUS SEMICONDUC

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[4]

DAVIS EA, 1979, AMORPHOUS SEMICONDUC

[5] OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI [J].

FREEMAN, EC ;

PAUL, W .

PHYSICAL REVIEW B, 1979, 20 (02) :716-728

[6] CALCULATION OF OPTICAL REFLECTION AND TRANSMISSION COEFFICIENTS OF A MULTILAYER SYSTEM [J].

HEHL, K ;

WESCH, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01) :181-188

[7] HIGH-FLUENCE IMPLANTATIONS OF SILICON - LAYER THICKNESS AND REFRACTIVE-INDEXES [J].

HUBLER, GK ;

WADDELL, CN ;

SPITZER, WG ;

FREDRICKSON, JE ;

PRUSSIN, S ;

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3294-3303

[8]

HUBLER GK, UNPUB RAD EFF

[9]

HUBLER GK, 1979, J APPL PHYS, V50, P7149

[10] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J].

JANAI, M ;

ALLRED, DD ;

BOOTH, DC ;

SERAPHIN, BO .

SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :11-27

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