CALCULATION OF OPTICAL REFLECTION AND TRANSMISSION COEFFICIENTS OF A MULTILAYER SYSTEM

被引:33
作者
HEHL, K
WESCH, W
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 01期
关键词
D O I
10.1002/pssa.2210580122
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:181 / 188
页数:8
相关论文
共 17 条
[1]  
[Anonymous], INTRO INTEGRATED OPT
[2]   EFFECT OF IRRADIATION TEMPERATURE ON SI AMORPHIZATION PROCESS [J].
BARANOVA, EC ;
GUSEV, VM ;
MARTYNENKO, YV ;
HAIBULLIN, IB .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (03) :157-162
[3]  
BARANOWA EK, 1975, FIZ TEKH POLUPROV, V9, P1154
[4]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[5]  
Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012
[6]   OPTICAL WAVEGUIDING IN PROTON-IMPLANTED GAAS [J].
GARMIRE, E ;
STOLL, H ;
YARIV, A ;
HUNSPERGER, RG .
APPLIED PHYSICS LETTERS, 1972, 21 (03) :87-+
[7]  
GLASER E, 1970, PHYS REV B, V1, P2632
[8]  
GLASER E, 1978, THESIS JENA
[9]   MEASUREMENTS OF LAYER THICKNESSES AND REFRACTIVE-INDEXES IN HIGH-ENERGY ION-IMPLANTED GAAS AND GAP [J].
KACHARE, AH ;
SPITZER, WG ;
FREDRICKSON, JE ;
EULER, FK .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5374-5381
[10]   REFRACTIVE-INDEX OF ION-IMPLANTED GAAS [J].
KACHARE, AH ;
SPITZER, WG ;
FREDRICKSON, JE .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4209-4212