OPTICAL WAVEGUIDING IN PROTON-IMPLANTED GAAS

[1] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[2] Hall D., 1970, Optics Communications, V1, P403, DOI 10.1016/0030-4018(70)90163-X

[3] OBSERVATION OF PROPAGATION CUTOFF AND ITS CONTROL IN THIN OPTICAL WAVEGUIDES [J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 127 - &

[4] ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES [J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 603 - +

[5] GA1-XALX AS PRODUCED BY AL+ ION IMPLANTATION OF GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (09) : 327 - +

[6] PRUNIAUX BR, 1971, ION IMPLANTATION SEM, P212

[7] OPTICAL WAVEGUIDES FROMED BY PROTON IRRADIATION OF FUSED SILICA [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (09) : 1171 - &

[8] WOHLLEBEN E, 1966, Z NATURFORSCH A, V21, P1057

[1] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[2] Hall D., 1970, Optics Communications, V1, P403, DOI 10.1016/0030-4018(70)90163-X

[3] OBSERVATION OF PROPAGATION CUTOFF AND ITS CONTROL IN THIN OPTICAL WAVEGUIDES [J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 127 - &

[4] ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES [J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 603 - +

[5] GA1-XALX AS PRODUCED BY AL+ ION IMPLANTATION OF GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (09) : 327 - +

[6] PRUNIAUX BR, 1971, ION IMPLANTATION SEM, P212

[7] OPTICAL WAVEGUIDES FROMED BY PROTON IRRADIATION OF FUSED SILICA [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (09) : 1171 - &

[8] WOHLLEBEN E, 1966, Z NATURFORSCH A, V21, P1057