MEASUREMENTS OF LAYER THICKNESSES AND REFRACTIVE-INDEXES IN HIGH-ENERGY ION-IMPLANTED GAAS AND GAP

被引:25
作者
KACHARE, AH
SPITZER, WG
FREDRICKSON, JE
EULER, FK
机构
[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007
[2] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
[3] CALIF STATE UNIV LONG BEACH,DEPT PHYS ASTRON,LONG BEACH,CA 90840
[4] USAF,ROME AIR DEV CTR,HANSCOM AFB,MA 01731
关键词
D O I
10.1063/1.322564
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:5374 / 5381
页数:8
相关论文
共 17 条
  • [1] OPTICAL PROPERTIES OF GALLIUM ARSENIDE-PHOSPHIDE
    CLARK, GD
    HOLONYAK, N
    [J]. PHYSICAL REVIEW, 1967, 156 (03): : 913 - +
  • [2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
    CSEPREGI, L
    MAYER, JW
    SIGMON, TW
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93
  • [3] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
    CSEPREGI, L
    MAYER, JW
    SIGMON, TW
    [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
  • [4] CSEPREGI L, TO BE PUBLISHED
  • [5] GIBBONS JF, 1975, PROJECTED RANGE STAT
  • [6] HEAVENS OS, 1964, OPTICAL PROPERTIES T, P76
  • [7] ION-IMPLANTED NITROGEN IN GALLIUM-ARSENIDE
    KACHARE, AH
    KAHAN, A
    EULER, FK
    WHATLEY, TA
    SPITZER, WG
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4393 - 4399
  • [8] REFRACTIVE-INDEX OF ION-IMPLANTED GAAS
    KACHARE, AH
    SPITZER, WG
    FREDRICKSON, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4209 - 4212
  • [9] INFRARED REFLECTION AND RAMAN-SCATTERING OF ION-IMPLANTED NITROGEN IN GALLIUM-PHOSPHIDE
    KACHARE, AH
    CHERLOW, JM
    YANG, TT
    SPITZER, WG
    EULER, FK
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 161 - 173
  • [10] INFRARED REFLECTION OF ION-IMPLANTED GAAS
    KACHARE, AH
    SPITZER, WG
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2938 - 2946