STRAIN AND THE INTERPRETATION OF BAND-LINEUP MEASUREMENTS - REPLY

被引：3

作者：

DUC, TM

HSU, C

FAURIE, JP

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.59.947

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：947 / 947

页数：1

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[1] LINEARITY (COMMUTATIVITY AND TRANSITIVITY) OF VALENCE-BAND DISCONTINUITY IN HETEROJUNCTIONS WITH TE-BASED II-VI SEMICONDUCTORS - CDTE, HGTE, AND ZNTE [J].

DUC, TM ;

HSU, C ;

FAURIE, JP .

PHYSICAL REVIEW LETTERS, 1987, 58 (11) :1127-1130

[2] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[3] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) :273-280

[4] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :265-273

[5] STRAIN AND THE INTERPRETATION OF BAND-LINEUP MEASUREMENTS [J].

TERSOFF, J ;

VAN DE WALLE, CG .

PHYSICAL REVIEW LETTERS, 1987, 59 (08) :946-946