ON COMPENSATION AND CONDUCTIVITY MODELS FOR MOLECULAR-BEAM-EPITAXIAL GAAS GROWN AT LOW-TEMPERATURE

被引：64

作者：

LOOK, DC

机构：

[1] University Research Center, Wright State University, Dayton

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.349295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular-beam-epitaxial GaAs grown at 200-degrees-C has an extremely high ( > 10(19) cm-3) concentration of As(Ga) defects and, after an anneal at 550-600-degrees-C, a high concentration of As precipitates. The relative roles of the As(Ga) defects and As precipitates in compensation and conductivity is controversial. Here criteria are developed to distinguish between two existing models.

引用

页码：3148 / 3151

页数：4

共 25 条

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