LOW-TEMPERATURE BUFFER GAAS-MESFET TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUIT APPLICATIONS

被引：14

作者：

DELANEY, MJ

CHOU, CS

LARSON, LE

JENSEN, JF

DEAKIN, DS

BROWN, AS

HOOPER, WW

THOMPSON, MA

MCCRAY, LG

ROSENBAUM, SE

机构：

来源：

关键词：

D O I：

10.1109/55.31755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：355 / 357

页数：3

共 13 条

[1] BACKGATING IN GAAS/(AL, GA)AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND ITS REDUCTION WITH A SUPERLATTICE
ARNOLD, D
KLEM, J
HENDERSON, T
MORKOC, H
ERICKSON, LP
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 764 - 766
[2] BIRRITELLA MS, 1985, IEEE T DEVICES, V29, P1135
[3] DAVANZO D, 1982, IEEE T ELECTRON DEV, V29, P1051
[4] BACKGATING CHARACTERISTICS OF MODFET STRUCTURES
EZIS, A
LANGER, DW
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 494 - 496
[5] Jensen J. F., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P476
[6] A SOURCE COUPLED FET LOGIC - A NEW CURRENT-MODE APPROACH TO GAAS LOGICS
KATSU, S
NAMBU, S
SHIMANO, A
KANO, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1114 - 1118
[7] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS
LEE, CP
LEE, SJ
WELCH, BM
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 97 - 98
[8] SHIELDING OF BACKGATING EFFECTS IN GAAS INTEGRATED-CIRCUITS
LEE, CP
CHANG, MF
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 169 - 171
[9] Mishra U. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P829
[10] PAULSON WM, 1982, TECH DIG GAAS IC S, P166