BACKGATING CHARACTERISTICS OF MODFET STRUCTURES

被引：16

作者：

EZIS, A ^{[1
]}

LANGER, DW ^{[1
]}

机构：

[1] USAF, WRIGHT AERONAUT LABS, AADR, WRIGHT PATTERSON AFB, OH 45433 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：494 / 496

页数：3

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共 6 条

[1] BACKGATING IN GAAS/(AL, GA)AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND ITS REDUCTION WITH A SUPERLATTICE
ARNOLD, D
KLEM, J
HENDERSON, T
MORKOC, H
ERICKSON, LP
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 764 - 766
[2] THE EFFECT OF BACKGATING ON THE DESIGN AND PERFORMANCE OF GAAS DIGITAL INTEGRATED-CIRCUITS
BIRRITTELLA, MS
SEELBACH, WC
GORONKIN, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (07) : 1135 - 1142
[3] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON
FISCHER, R
HENDERSON, T
KLEM, J
MASSELINK, WT
KOPP, W
MORKOC, H
LITTON, CW
[J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947
[4] GORONKIN H, 1983, AUG P IEEE C HIGH SP
[5] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS
LEE, CP
LEE, SJ
WELCH, BM
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 97 - 98
[6] SHENG NH, 1984, DEC P IEDM, P352