SHIELDING OF BACKGATING EFFECTS IN GAAS INTEGRATED-CIRCUITS

被引：16

作者：

LEE, CP

CHANG, MF

机构：

来源：

关键词：

D O I：

10.1109/EDL.1985.26085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：169 / 171

页数：3

共 6 条

[1] MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS [J].

CHANG, MF ;

LEE, CP ;

HOU, LD ;

VAHRENKAMP, RP ;

KIRKPATRICK, CG .

[2]

DAVANZO D, 1982, IEEE T ELECTRON DEV, V29, P1051

[3]

Lee C. P., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P169

[4] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS [J].

LEE, CP ;

LEE, SJ ;

WELCH, BM .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :97-98

MAKRAMEBEID, S ;

GAUTARD, D ;

DEVILLARD, P ;

MARTIN, GM .

[6]

Paulson W. M., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P166