VAPOR ETCHING OF BORON MONOPHOSPHIDE BY GASEOUS HYDROGEN-CHLORIDE

被引:10
作者
MIZUTANI, T [1 ]
ASANO, H [1 ]
NISHINAGA, T [1 ]
UCHIYAMA, S [1 ]
机构
[1] NAGOYA UNIV,FAC ENGN,DEPT ELECTR,NAGOYA 464,JAPAN
关键词
D O I
10.1143/JJAP.16.1629
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1629 / 1633
页数:5
相关论文
共 8 条
[1]  
BARIN L, 1973, THERMOCHEMICAL PROPE
[2]   ELECTROLYTIC ETCHING OF BORON PHOSPHIDE [J].
CHU, TL ;
GILL, M ;
CHU, SS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) :259-262
[3]   EFFECT OF GROWTH PARAMETERS ON EPITAXIAL-GROWTH OF BP ON SI SUBSTRATE [J].
NISHINAGA, T ;
MIZUTANI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (06) :753-760
[4]  
NISHINAGA T, 1974, 4TH P INT C CRYST GR, P243
[5]   PREPARATION AND PROPERTIES OF THE BORON PHOSPHIDES [J].
PERET, JL .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (01) :44-46
[6]  
STONE BD, 1962, 1961 P C ULTR SEM MA, P645
[7]   HETEROEPITAXIAL GROWTH OF BORON MONOPHOSPHIDE ON SILICON SUBSTRATE USING B2H6-PH3-H2 SYSTEM [J].
TAKIGAWA, M ;
HIRAYAMA, M ;
SHOHNO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) :411-416
[8]  
[No title captured]