LASER-ASSISTED ETCHING OF MANGANESE-ZINC-FERRITE

被引：15

作者：

YUNG, EK ^{[1
]}

HUSSEY, BW ^{[1
]}

GUPTA, A ^{[1
]}

ROMANKIW, LT ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1149/1.2096707

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：665 / 673

页数：9

共 16 条

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[3] SI ETCHING AFFECTED BY IR LASER IRRADIATION
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[7] CONTRIBUTION TO TIME-RESOLVED ENHANCED CHEMICAL ETCHING AND SIMULTANEOUS ANNEALING OF ION-IMPLANTATION AMORPHIZED SILICON UNDER INTENSE LASER IRRADIATION
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (02): : 109 - 115
[8] ROMANKIW LT, 1982, NEW DEV TRENDS, P66
[9] TEMPERATURE DISTRIBUTIONS PRODUCED BY SCANNING GAUSSIAN LASER-BEAMS
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