SI ETCHING AFFECTED BY IR LASER IRRADIATION

[1] BUNKIN FV, 1984, PISMA ZHETF, V39, P441

[2] INFRARED-LASER INDUCED REACTION OF SF6 WITH SILICON SURFACES [J]. JOURNAL OF CHEMICAL PHYSICS, 1980, 72 (11) : 6303 - 6304

[3] MULTIPLE PHOTON EXCITED SF6 INTERACTION WITH SILICON SURFACES [J]. JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (02) : 1453 - 1460

[4] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[5] LUKYANCHUK BS, 128 PREPR

[6] LOCALIZED LASER ETCHING OF COMPOUND SEMICONDUCTORS IN AQUEOUS-SOLUTION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 391 - 393

[7] LASER ENHANCED ETCHING IN KOH [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 352 - 354

[1] BUNKIN FV, 1984, PISMA ZHETF, V39, P441

[2] INFRARED-LASER INDUCED REACTION OF SF6 WITH SILICON SURFACES [J]. JOURNAL OF CHEMICAL PHYSICS, 1980, 72 (11) : 6303 - 6304

[3] MULTIPLE PHOTON EXCITED SF6 INTERACTION WITH SILICON SURFACES [J]. JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (02) : 1453 - 1460

[4] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[5] LUKYANCHUK BS, 128 PREPR

[6] LOCALIZED LASER ETCHING OF COMPOUND SEMICONDUCTORS IN AQUEOUS-SOLUTION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 391 - 393

[7] LASER ENHANCED ETCHING IN KOH [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 352 - 354