LOCALIZED LASER ETCHING OF COMPOUND SEMICONDUCTORS IN AQUEOUS-SOLUTION

被引：89

作者：

OSGOOD, RM ^{[1
]}

SANCHEZRUBIO, A ^{[1
]}

EHRLICH, DJ ^{[1
]}

DANEU, V ^{[1
]}

机构：

[1] MIT, LINCOLN LAB, LEXINGTON, MA 02173 USA

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 05期

关键词：

D O I：

10.1063/1.93113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：391 / 393

页数：3

相关论文

共 13 条

[1] Alferov Zh. I., 1976, Soviet Physics - Technical Physics, V21, P857
[2] Belyakov L. V., 1974, Soviet Physics - Technical Physics, V19, P837
[3] IMPROVED PERFORMANCE OF GAAS MICROWAVE FIELD-EFFECT TRANSISTORS WITH LOW INDUCTANCE VIA-CONNECTIONS THROUGH SUBSTRATE
DASARO, LA
DILORENZO, JV
FUKUI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1218 - 1221
[4] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP
EHRLICH, DJ
OSGOOD, RM
DEUTSCH, TF
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 698 - 700
[5] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON
EHRLICH, DJ
OSGOOD, RM
DEUTSCH, TF
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020
[6] LASER-PHOTOINDUCED ETCHING OF SEMICONDUCTORS AND METALS
HAYNES, RW
METZE, GM
KREISMANIS, VG
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 344 - 346
[7] VOLTAGE-CONTROLLED PHOTOETCHING OF GAAS
HOFFMANN, HJ
WOODALL, JM
CHAPPELL, TI
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 564 - 566
[8] SELECTIVE PHOTOETCHING OF GALLIUM-ARSENIDE
KUHNKUHNENFELD, F
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1063 - +
[9] LEONBERGER F, COMMUNICATION
[10] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
LIDA, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 768 - &