CONTRIBUTION TO TIME-RESOLVED ENHANCED CHEMICAL ETCHING AND SIMULTANEOUS ANNEALING OF ION-IMPLANTATION AMORPHIZED SILICON UNDER INTENSE LASER IRRADIATION

被引：3

作者：

KRIMMEL, EF

LUTSCH, AGK

SWANEPOEL, R

BRINK, J

机构：

[1] RAND AFRIKAANS UNIV,JOHANNESBURG,SOUTH AFRICA

[2] CSIR,PRETORIA,SOUTH AFRICA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 38卷 / 02期

关键词：

D O I：

10.1007/BF00620461

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：109 / 115

页数：7

共 8 条

[1]

BAUERLE D, 1984, SPRINGER SER CHEM PH, V39

[2]

Carslaw HS, 1984, CONDUCTION HEAT SOLI

[3]

DEARNALEY G., 1973, ION IMPLANTATION

[4]

EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

KRIMMEL, E .

ZEITSCHRIFT FUR PHYSIK, 1961, 163 (01) :339-&

KRIMMEL, EF ;

OPPOLZER, H ;

RUNGE, H ;

WONDRAK, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02) :565-571

[7]

KRIMMEL EF, 1984, COMMUNICATION

[8] LASER ENHANCED ETCHING IN KOH [J].

VONGUTFELD, RJ ;

HODGSON, RT .