KINETICS OF SCANNED ELECTRON-BEAM ANNEALING OF HIGH-ENERGY AS ION-IMPLANTED SILICON

被引：19

作者：

KRIMMEL, EF ^{[1
]}

OPPOLZER, H ^{[1
]}

RUNGE, H ^{[1
]}

WONDRAK, W ^{[1
]}

机构：

[1] UNIV FRANKFURT,INST KERNPHYS,D-6000 FRANKFURT 70,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 02期

关键词：

D O I：

10.1002/pssa.2210660219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：565 / 571

页数：7

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