INCLUSION OF IMPACT IONIZATION IN THE BACKGATING OF GAAS-FETS

被引：18

作者：

LI, ZM ^{[1
]}

DAY, DJ ^{[1
]}

MCALISTER, SP ^{[1
]}

HURD, CM ^{[1
]}

机构：

[1] VARIAN ASSOCIATES INC,PALO ALTO,CA 94303

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 08期

关键词：

D O I：

10.1109/55.57928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that the familiar threshold behavior of the back-gate current of GaAs MESFET's has hysteresis. This is associated with an S-type negative differential conductivity (S-NDC) of the semi-insulating substrate. It is difficult to account for this hysteresis using conventional trap-fill-limited (TFL) theory, and we attribute it rather to the impact ionization of traps in the substrate. We use a simple model of this ionization, involving two trap levels, to incorporate its effect into an existing analytical model of GaAs FET's. The result is a qualitative interpretation of the backgating characteristics of GaAs MESFET's. © 1990 IEEE

引用

页码：342 / 345

页数：4

共 13 条

[1]

[Anonymous], 1987, GAAS DEVICES CIRCUIT

[2] ELECTRON-CAPTURE AND EMISSION FOR MIDGAP CENTERS [J].