INSTABILITY AND GATE VOLTAGE NOISE IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：9

作者：

DAY, DJ ^{[1
]}

TRUDEAU, M ^{[1
]}

MCALISTER, SP ^{[1
]}

HURD, CM ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,DIV CHEM,OTTAWA K1A 0R9,ONTARIO,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1989年 / 67卷 / 04期

关键词：

D O I：

10.1139/p89-042

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：238 / 241

页数：4

共 16 条

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