NOISE VOLTAGE AND INSTABILITY IN GAAS DEVICES

被引：9

作者：

DAY, DJ ^{[1
]}

TRUDEAU, M ^{[1
]}

MCALISTER, SP ^{[1
]}

HURD, CM ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,OTTAWA K1A 0R9,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 24期

关键词：

D O I：

10.1063/1.99573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2034 / 2036

页数：3

共 16 条

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[2]

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[7]

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[9] NOISE BEHAVIOR OF 1-MU-M GATE-LENGTH MODULATION-DOPED FETS FROM 10(-2) TO 10(8) HZ [J].

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[10]

Miller D., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P31

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