CONDUCTION IN ILLUMINATED GAAS/ALXGA1-XAS HETEROSTRUCTURES .1. EXPERIMENT

被引：9

作者：

HURD, CM ^{[1
]}

MCALISTER, SP ^{[1
]}

MCKINNON, WR ^{[1
]}

FALT, CE ^{[1
]}

DAY, DJ ^{[1
]}

MINER, CJ ^{[1
]}

SPRINGTHORPE, AJ ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.338946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2244 / 2249

页数：6

共 20 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 857 - 861
[5] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
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[6] NEUTRAL IMPURITY SCATTERING IN ALGAAS
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[7] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT
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DRUMMOND, TJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 656 - 658
[8] SELF-CONSISTENT CALCULATIONS ON GAAS-ALXGA1-XAS HETEROJUNCTIONS
HURKX, GAM
VANHAERINGEN, W
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29): : 5617 - 5627
[9] PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION DOPED HETEROJUNCTIONS
KANE, MJ
APSLEY, N
ANDERSON, DA
TAYLOR, LL
KERR, T
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29): : 5629 - 5636
[10] ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION DOPED LAYERS
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SHUR, M
DRUMMOND, TJ
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2093 - 2096

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