SELF-CONSISTENT CALCULATIONS ON GAAS-ALXGA1-XAS HETEROJUNCTIONS

被引:37
作者
HURKX, GAM [1 ]
VANHAERINGEN, W [1 ]
机构
[1] EINDHOVEN UNIV TECHNOL,DEPT PHYS,5600 MB EINDHOVEN,NETHERLANDS
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 29期
关键词
D O I
10.1088/0022-3719/18/29/012
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:5617 / 5627
页数:11
相关论文
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[3]   STURM-LIOUVILLE EIGENVALUES VIA A PHASE FUNCTION [J].
BAILEY, PB .
SIAM JOURNAL ON APPLIED MATHEMATICS, 1966, 14 (02) :242-&
[5]   CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD [J].
HIRAKAWA, K ;
SAKAKI, H ;
YOSHINO, J .
APPLIED PHYSICS LETTERS, 1984, 45 (03) :253-255
[6]   TRANSPORT-PROPERTIES OF SELECTIVELY DOPED GAAS-(ALGA)AS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
HWANG, JCM ;
KASTALSKY, A ;
STORMER, HL ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :802-804
[7]   SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].
KOHN, W ;
SHAM, LJ .
PHYSICAL REVIEW, 1965, 140 (4A) :1133-&
[8]   ELECTRONS IN PERTURBED PERIODIC LATTICES [J].
SLATER, JC .
PHYSICAL REVIEW, 1949, 76 (11) :1592-1601
[9]   DOPING CONSIDERATIONS FOR HETEROJUNCTIONS [J].
STERN, F .
APPLIED PHYSICS LETTERS, 1983, 43 (10) :974-976
[10]   2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].
STORMER, HL ;
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W ;
STURGE, MD .
SOLID STATE COMMUNICATIONS, 1979, 29 (10) :705-709