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EXPERIMENTAL EVALUATION OF LOW-FREQUENCY OSCILLATIONS IN UNDOPED GAAS TO PROBE DEEP LEVEL PARAMETERS
被引:38
作者
:
MARACAS, GN
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,SEMICOND RES & DEV LABS,PHOENIX,AZ 85008
MOTOROLA INC,SEMICOND RES & DEV LABS,PHOENIX,AZ 85008
MARACAS, GN
[
1
]
JOHNSON, DA
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,SEMICOND RES & DEV LABS,PHOENIX,AZ 85008
MOTOROLA INC,SEMICOND RES & DEV LABS,PHOENIX,AZ 85008
JOHNSON, DA
[
1
]
GORONKIN, H
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,SEMICOND RES & DEV LABS,PHOENIX,AZ 85008
MOTOROLA INC,SEMICOND RES & DEV LABS,PHOENIX,AZ 85008
GORONKIN, H
[
1
]
机构
:
[1]
MOTOROLA INC,SEMICOND RES & DEV LABS,PHOENIX,AZ 85008
来源
:
APPLIED PHYSICS LETTERS
|
1985年
/ 46卷
/ 03期
关键词
:
D O I
:
10.1063/1.95667
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:305 / 307
页数:3
相关论文
共 6 条
[1]
GORONKIN H, 1984, DEC IEDM C P, P182
[2]
CURRENT OSCILLATIONS IN SEMI-INSULATING GAAS ASSOCIATED WITH FIELD-ENHANCED CAPTURE OF ELECTRONS BY THE MAJOR DEEP DONOR EL2
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
KAMINSKA, M
PARSEY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
PARSEY, JM
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
LAGOWSKI, J
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
GATOS, HC
[J].
APPLIED PHYSICS LETTERS,
1982,
41
(10)
: 989
-
991
[3]
REAL AND APPARENT EFFECTS OF STRONG ELECTRIC-FIELDS ON THE ELECTRON-EMISSION FROM MIDGAP LEVELS EL2 AND EL0 IN GAAS
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
LAGOWSKI, J
LIN, DG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
LIN, DG
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
GATOS, HC
PARSEY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
PARSEY, JM
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
KAMINSKA, M
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(01)
: 89
-
91
[4]
ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE
NORTHROP, DC
论文数:
0
引用数:
0
h-index:
0
NORTHROP, DC
THORNTON, PR
论文数:
0
引用数:
0
h-index:
0
THORNTON, PR
TREZISE, KE
论文数:
0
引用数:
0
h-index:
0
TREZISE, KE
[J].
SOLID-STATE ELECTRONICS,
1964,
7
(01)
: 17
-
&
[5]
INFLUENCE OF TRAPS ON WATKINS-GUNN EFFECT
RIDLEY, BK
论文数:
0
引用数:
0
h-index:
0
RIDLEY, BK
[J].
BRITISH JOURNAL OF APPLIED PHYSICS,
1966,
17
(05):
: 595
-
&
[6]
EXPERIMENTAL STUDY OF HIGH-FIELD MOVING DOMAINS PRODUCED BY DEEP CENTRES IN SEMI-INSULATING GAAS
SACKS, HK
论文数:
0
引用数:
0
h-index:
0
SACKS, HK
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
[J].
INTERNATIONAL JOURNAL OF ELECTRONICS,
1971,
30
(01)
: 49
-
&
←
1
→
共 6 条
[1]
GORONKIN H, 1984, DEC IEDM C P, P182
[2]
CURRENT OSCILLATIONS IN SEMI-INSULATING GAAS ASSOCIATED WITH FIELD-ENHANCED CAPTURE OF ELECTRONS BY THE MAJOR DEEP DONOR EL2
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
KAMINSKA, M
PARSEY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
PARSEY, JM
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
LAGOWSKI, J
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
GATOS, HC
[J].
APPLIED PHYSICS LETTERS,
1982,
41
(10)
: 989
-
991
[3]
REAL AND APPARENT EFFECTS OF STRONG ELECTRIC-FIELDS ON THE ELECTRON-EMISSION FROM MIDGAP LEVELS EL2 AND EL0 IN GAAS
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
LAGOWSKI, J
LIN, DG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
LIN, DG
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
GATOS, HC
PARSEY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
PARSEY, JM
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
KAMINSKA, M
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(01)
: 89
-
91
[4]
ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE
NORTHROP, DC
论文数:
0
引用数:
0
h-index:
0
NORTHROP, DC
THORNTON, PR
论文数:
0
引用数:
0
h-index:
0
THORNTON, PR
TREZISE, KE
论文数:
0
引用数:
0
h-index:
0
TREZISE, KE
[J].
SOLID-STATE ELECTRONICS,
1964,
7
(01)
: 17
-
&
[5]
INFLUENCE OF TRAPS ON WATKINS-GUNN EFFECT
RIDLEY, BK
论文数:
0
引用数:
0
h-index:
0
RIDLEY, BK
[J].
BRITISH JOURNAL OF APPLIED PHYSICS,
1966,
17
(05):
: 595
-
&
[6]
EXPERIMENTAL STUDY OF HIGH-FIELD MOVING DOMAINS PRODUCED BY DEEP CENTRES IN SEMI-INSULATING GAAS
SACKS, HK
论文数:
0
引用数:
0
h-index:
0
SACKS, HK
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
[J].
INTERNATIONAL JOURNAL OF ELECTRONICS,
1971,
30
(01)
: 49
-
&
←
1
→